BC847AMB,315
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- Mfr.Part #
- BC847AMB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 38,716
- In Stock ：
- 38,716
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Configuration :
- Single
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Base Part Number :
- BC847
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 200mV
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500μA, 10mA
- Terminal Form :
- NO LEAD
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- NPN
- Published :
- 2011
- Contact Plating :
- Tin
- Package / Case :
- 3-XFDFN
- Transistor Application :
- SWITCHING
- Power - Max :
- 250mW
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Datasheets
- BC847AMB,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847AMB,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 200mV @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 100mA volts can be achieved.
BC847AMB,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847AMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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