BC847AMB,315
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- Mfr.Part #
- BC847AMB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1006B-3
- Stock
- 38,716
- In Stock ：
- 38,716
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500μA, 10mA
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Published :
- 2011
- Base Part Number :
- BC847
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 8 Weeks
- Power - Max :
- 250mW
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Terminal Form :
- NO LEAD
- Configuration :
- Single
- Frequency - Transition :
- 100MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-XFDFN
- Collector Emitter Voltage (VCEO) :
- 200mV
- Max Collector Current :
- 100mA
- Datasheets
- BC847AMB,315
BC847AMB,315 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847AMB,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 200mV @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 100mA volts can be achieved.
BC847AMB,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847AMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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