BC847AM315
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- Mfr.Part #
- BC847AM315
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT883
- Stock
- 34,217
- In Stock ：
- 34,217
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2008
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Max Power Dissipation :
- 250mW
- Max Breakdown Voltage :
- 45V
- Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Base Part Number :
- BC847
- Package / Case :
- SC-101, SOT-883
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Series :
- Automotive, AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Datasheets
- BC847AM315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
BC847AM,315 Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847AM,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AM,315 Applications
There are a lot of Nexperia USA Inc.
BC847AM,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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