BC847ALT1G
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- Mfr.Part #
- BC847ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 20,853
- In Stock ：
- 20,853
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Height :
- 1.11mm
- Frequency :
- 100MHz
- Width :
- 2.64mm
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Lead Free :
- Lead Free
- Length :
- 3.04mm
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 600mV
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- hFE Min :
- 110
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Cut Tape (CT)
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Surface Mount :
- yes
- Voltage - Rated DC :
- 45V
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Pin Count :
- 3
- Published :
- 2007
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC847ALT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847ALT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847ALT1G Applications
There are a lot of ON Semiconductor
BC847ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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