BC847ALT1
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- Mfr.Part #
- BC847ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 100MA SOT23
- Stock
- 733
- In Stock ：
- 733
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 45V
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Current Rating :
- 100mA
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- hFE Min :
- 110
- Collector Emitter Saturation Voltage :
- 600mV
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Width :
- 2.64mm
- Gain Bandwidth Product :
- 100MHz
- Height :
- 1.11mm
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3.04mm
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 45V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Cut Tape (CT)
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC847ALT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847ALT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847ALT1G Applications
There are a lot of ON Semiconductor
BC847ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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