BC847ALT1
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- Mfr.Part #
- BC847ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 100MA SOT23
- Stock
- 733
- In Stock ：
- 733
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 3.04mm
- Width :
- 2.64mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Base Voltage (VCBO) :
- 50V
- Halogen Free :
- Halogen Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- hFE Min :
- 110
- Collector Emitter Voltage (VCEO) :
- 45V
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Published :
- 2007
- Height :
- 1.11mm
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Current Rating :
- 100mA
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Voltage - Rated DC :
- 45V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC847ALT1
BC847ALT1 Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847ALT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847ALT1G Applications
There are a lot of ON Semiconductor
BC847ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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