BC846W,115
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- Mfr.Part #
- BC846W,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT323
- Stock
- 231,205
- In Stock ：
- 231,205
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Max Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 65V
- Collector Emitter Breakdown Voltage :
- 65V
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC846
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC846W,115
BC846W,115 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC846W,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC846W,115 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC846W,115 Applications
There are a lot of Nexperia USA Inc.
BC846W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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