BC846UPNE6327HTSA1
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- Mfr.Part #
- BC846UPNE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN/PNP 65V 0.1A SC74-6
- Stock
- 53,765
- In Stock ：
- 53,765
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 200
- JESD-609 Code :
- e3
- Halogen Free :
- Not Halogen Free
- Collector Base Voltage (VCBO) :
- 80V
- Width :
- 1.6mm
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 250MHz
- Polarity :
- NPN, PNP
- Number of Terminations :
- 6
- Current Rating :
- 100mA
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Number of Elements :
- 2
- Collector Emitter Saturation Voltage :
- 650mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 650mV
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1mm
- Package / Case :
- SC-74, SOT-457
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN, PNP
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 250MHz
- Published :
- 2011
- Collector Emitter Breakdown Voltage :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Voltage - Rated DC :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Reference Standard :
- AEC-Q101
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Number of Pins :
- 6
- Length :
- 2.9mm
- Base Part Number :
- BC846
- Max Collector Current :
- 100mA
- Datasheets
- BC846UPNE6327HTSA1
BC846UPNE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Infineon Technologies stock available at
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