BC846SH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Number of Terminations :

6

Published :

2004

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G6

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

600mV

Package / Case :

6-VSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

15nA ICBO

Factory Lead Time :

4 Weeks

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Power - Max :

250mW

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Max Collector Current :

100mA

Mount :

Surface Mount

Max Power Dissipation :

250mW

Frequency - Transition :

250MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Base Part Number :

BC846S

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Type :

2 NPN (Dual)

Collector Emitter Breakdown Voltage :

65V

Collector Base Voltage (VCBO) :

80V

Mounting Type :

Surface Mount

Transition Frequency :

250MHz

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V