BC846BWT1G
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- Mfr.Part #
- BC846BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SC70-3
- Stock
- 3,733
- In Stock ：
- 3,733
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 900μm
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Packaging :
- Cut Tape (CT)
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Length :
- 2.2mm
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- hFE Min :
- 150
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Halogen Free :
- Halogen Free
- Width :
- 1.35mm
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 65V
- Voltage - Rated DC :
- 65V
- Mounting Type :
- Surface Mount
- Current Rating :
- 100mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 100MHz
- Surface Mount :
- yes
- Power Dissipation :
- 150mW
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 65V
- Transistor Type :
- NPN
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 150mW
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 65V
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2005
- Factory Lead Time :
- 5 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Application :
- AMPLIFIER
- Datasheets
- BC846BWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Cut Tape (CT) Surface Mount
BC846BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC846BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BWT1G Applications
There are a lot of ON Semiconductor
BC846BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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