BC846BWQ-7-F
- Mfr.Part #
- BC846BWQ-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- GENERAL PURPOSE TRANSISTOR SOT32
- Stock
- 40,194
- In Stock :
- 40,194
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Supply (Max) :
- 36mA
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Manufacturer :
- Diodes Incorporated
- Frequency - Transition :
- 300MHz
- Supplier Device Package :
- SOT-323
- Frequency Stability :
- ±10ppm
- ECCN Code :
- EAR99
- DC Current Gain-Min (hFE) :
- 200
- Type :
- XO (Standard)
- Voltage - Supply :
- 3.3V
- Power Dissipation-Max (Abs) :
- 0.2 W
- Factory Lead Time :
- 13 Weeks
- Product Status :
- Active
- Additional Feature :
- High Reliability
- Current - Collector (Ic) (Max) :
- 100 mA
- Package :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Package / Case :
- 4-SMD, No Lead
- Voltage - Collector Emitter Breakdown (Max) :
- 65 V
- Absolute Pull Range (APR) :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Reference Standard :
- AEC-Q101
- Transistor Polarity :
- PNP
- Base Resonator :
- MEMS
- Size / Dimension :
- 0.276 L x 0.197 W (7.00mm x 5.00mm)
- Current - Supply (Disable) (Max) :
- 31mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 5V
- Transistor Application :
- SWITCHING
- Ratings :
- --
- Package Shape :
- RECTANGULAR
- Collector Current-Max (IC) :
- 0.1 A
- Brand :
- Diodes Incorporated
- Technology :
- Si
- JESD-30 Code :
- R-PDSO-G3
- Series :
- SiT8209
- Configuration :
- Single
- Terminal Form :
- Gull wing
- Operating Temperature :
- -20°C ~ 70°C
- Continuous Collector Current :
- 3
- Height - Seated (Max) :
- 0.039 (1.00mm)
- Function :
- Enable/Disable
- Terminal Position :
- Dual
- Subcategory :
- Transistors
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power Dissipation :
- 5
- Current - Collector Cutoff (Max) :
- 20nA (ICBO)
- Transition Frequency :
- 125
- Surface Mount :
- yes
- Product Type :
- BJTs - Bipolar Transistors
- RoHS :
- Details
- Collector-Emitter Voltage-Max :
- 65 V
- Frequency :
- 133MHz
- Terminal Finish :
- Matte Tin (Sn)
- Product Category :
- Bipolar Transistors - BJT
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Compliant
- Output :
- LVCMOS, LVTTL
- Number of Elements :
- 1
- Power - Max :
- 200 mW
- Number of Terminals :
- 3
- Datasheets
- BC846BWQ-7-F
NPN -20°C ~ 70°C 20nA (ICBO) 1 Elements SILICON NPN 4-SMD, No Lead Tape & Reel (TR) Surface Mount
BC846BWQ-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA, 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3 for high efficiency.In the part, the transition frequency is 125.Supplier package SOT-323 contains the product.Voltage maximal between collector and emitter is set to 65 V.The device has a 65 V maximal voltage - Collector Emitter Breakdown.
BC846BWQ-7-F Features
the DC current gain for this device is 200 @ 2mA, 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 125
the supplier device package of SOT-323
BC846BWQ-7-F Applications
There are a lot of Diodes
BC846BWQ-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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