BC846BWQ-7-F

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Mfr.Part #
BC846BWQ-7-F
Manufacturer
Diodes Incorporated
Package / Case
4-SMD, No Lead
Datasheet
Download
Description
GENERAL PURPOSE TRANSISTOR SOT32
Stock
40,194
In Stock :
40,194

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Supply (Max) :
36mA
Transistor Type :
NPN
Mounting Type :
Surface Mount
Manufacturer :
Diodes Incorporated
Frequency - Transition :
300MHz
Supplier Device Package :
SOT-323
Frequency Stability :
±10ppm
ECCN Code :
EAR99
DC Current Gain-Min (hFE) :
200
Type :
XO (Standard)
Voltage - Supply :
3.3V
Power Dissipation-Max (Abs) :
0.2 W
Factory Lead Time :
13 Weeks
Product Status :
Active
Additional Feature :
High Reliability
Current - Collector (Ic) (Max) :
100 mA
Package :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
Package / Case :
4-SMD, No Lead
Voltage - Collector Emitter Breakdown (Max) :
65 V
Absolute Pull Range (APR) :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Reference Standard :
AEC-Q101
Transistor Polarity :
PNP
Base Resonator :
MEMS
Size / Dimension :
0.276 L x 0.197 W (7.00mm x 5.00mm)
Current - Supply (Disable) (Max) :
31mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 5V
Transistor Application :
SWITCHING
Ratings :
--
Package Shape :
RECTANGULAR
Collector Current-Max (IC) :
0.1 A
Brand :
Diodes Incorporated
Technology :
Si
JESD-30 Code :
R-PDSO-G3
Series :
SiT8209
Configuration :
Single
Terminal Form :
Gull wing
Operating Temperature :
-20°C ~ 70°C
Continuous Collector Current :
3
Height - Seated (Max) :
0.039 (1.00mm)
Function :
Enable/Disable
Terminal Position :
Dual
Subcategory :
Transistors
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
Power Dissipation :
5
Current - Collector Cutoff (Max) :
20nA (ICBO)
Transition Frequency :
125
Surface Mount :
yes
Product Type :
BJTs - Bipolar Transistors
RoHS :
Details
Collector-Emitter Voltage-Max :
65 V
Frequency :
133MHz
Terminal Finish :
Matte Tin (Sn)
Product Category :
Bipolar Transistors - BJT
JESD-609 Code :
e3
Reach Compliance Code :
Compliant
Output :
LVCMOS, LVTTL
Number of Elements :
1
Power - Max :
200 mW
Number of Terminals :
3
Datasheets
BC846BWQ-7-F
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated BC846BWQ-7-F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Type:XO (Standard), Package / Case:4-SMD, No Lead, Operating Temperature:-20°C ~ 70°C, Output:LVCMOS, LVTTL, BC846BWQ-7-F pinout, BC846BWQ-7-F datasheet PDF, BC846BWQ-7-F amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated BC846BWQ-7-F ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -20°C ~ 70°C 20nA (ICBO) 1 Elements SILICON NPN 4-SMD, No Lead Tape & Reel (TR) Surface Mount

BC846BWQ-7-F Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA, 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3 for high efficiency.In the part, the transition frequency is 125.Supplier package SOT-323 contains the product.Voltage maximal between collector and emitter is set to 65 V.The device has a 65 V maximal voltage - Collector Emitter Breakdown.

BC846BWQ-7-F Features


the DC current gain for this device is 200 @ 2mA, 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 125
the supplier device package of SOT-323


BC846BWQ-7-F Applications


There are a lot of Diodes
BC846BWQ-7-F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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