BC846BT,115
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- Mfr.Part #
- BC846BT,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SC75
- Stock
- 20,521
- In Stock ：
- 20,521
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 0.15W
- JESD-609 Code :
- e3
- Package / Case :
- SC-75, SOT-416
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Power - Max :
- 150mW
- JESD-30 Code :
- R-PDSO-G3
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 100MHz
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Base Part Number :
- BC846
- Voltage - Collector Emitter Breakdown (Max) :
- 65V
- Datasheets
- BC846BT,115
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC846BT,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.
BC846BT,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC846BT,115 Applications
There are a lot of NXP USA Inc.
BC846BT,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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