BC846BPN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

65V

Collector Emitter Breakdown Voltage :

65V

Number of Terminations :

6

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

6V

Mounting Type :

Surface Mount

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

200mV

Number of Pins :

6

Pin Count :

6

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2009

JESD-609 Code :

e3

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

ECCN Code :

EAR99

Number of Elements :

2

Collector Base Voltage (VCBO) :

80V

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

hFE Min :

200

Frequency :

100MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Base Part Number :

BC846BP

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

65V

Transistor Application :

SWITCHING

Transistor Type :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Dual

Series :

Automotive, AEC-Q101

Height :

1.1mm

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Ambient Temperature Range High :

150°C

REACH SVHC :

No SVHC

Max Collector Current :

100mA

Power Dissipation :

200mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Contact Plating :

Tin

Mount :

Surface Mount

Polarity :

NPN, PNP