BC846BLT3G
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- Mfr.Part #
- BC846BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 2,923
- In Stock ：
- 2,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 65V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Length :
- 2.9mm
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 600mV
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Voltage - Rated DC :
- 65V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- hFE Min :
- 200
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Width :
- 1.3mm
- Max Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 65V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Published :
- 2007
- Height :
- 1mm
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 65V
- Transition Frequency :
- 100MHz
- Current Rating :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Datasheets
- BC846BLT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846BLT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BLT3G Applications
There are a lot of ON Semiconductor
BC846BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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