BC846BLT3G
- Mfr.Part #
- BC846BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 2,923
- In Stock :
- 2,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 65V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Width :
- 1.3mm
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 65V
- Pin Count :
- 3
- Height :
- 1mm
- Voltage - Rated DC :
- 65V
- Transistor Type :
- NPN
- Current Rating :
- 100mA
- Transition Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- Published :
- 2007
- Number of Elements :
- 1
- hFE Min :
- 200
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Length :
- 2.9mm
- Surface Mount :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 600mV
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 65V
- Datasheets
- BC846BLT3G
BC846BLT3G Documents

NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846BLT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BLT3G Applications
There are a lot of ON Semiconductor
BC846BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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