BC846BLT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

6V

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Height :

940μm

Number of Elements :

1

Gain Bandwidth Product :

100MHz

Number of Terminations :

3

Width :

1.3mm

Max Power Dissipation :

300mW

Pin Count :

3

Pbfree Code :

yes

Number of Pins :

3

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

80V

Published :

2005

hFE Min :

200

Current - Collector Cutoff (Max) :

15nA ICBO

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Noise Figure :

10 dB

Surface Mount :

yes

Max Breakdown Voltage :

65V

Max Collector Current :

100mA

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Length :

2.9mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

600mV

Voltage - Rated DC :

65V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

65V

Operating Temperature :

-55°C~150°C TJ

Type :

GENERAL PURPOSE

Terminal Form :

Gull wing

Frequency :

100MHz

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current Rating :

100mA

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Power Dissipation :

300mW

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

65V

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)