BC846BLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

65V

Mounting Type :

Surface Mount

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Terminal Form :

Gull wing

Radiation Hardening :

No

Voltage - Rated DC :

65V

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

15nA ICBO

Height :

940μm

Max Power Dissipation :

300mW

Length :

2.9mm

Type :

GENERAL PURPOSE

REACH SVHC :

No SVHC

Noise Figure :

10 dB

Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gain Bandwidth Product :

100MHz

Width :

1.3mm

hFE Min :

200

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current Rating :

100mA

Transistor Application :

SWITCHING

Surface Mount :

yes

Published :

2005

Max Collector Current :

100mA

Power Dissipation :

300mW

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

ECCN Code :

EAR99

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Element Configuration :

Single

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

600mV

Pin Count :

3

Collector Base Voltage (VCBO) :

80V

Number of Terminations :

3

Packaging :

Cut Tape (CT)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

65V

Max Breakdown Voltage :

65V

Transition Frequency :

100MHz

Contact Plating :

Tin