BC846BLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Lead Free :

Lead Free

Max Power Dissipation :

300mW

Packaging :

Cut Tape (CT)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

200

Type :

GENERAL PURPOSE

JESD-609 Code :

e3

Published :

2005

Collector Emitter Breakdown Voltage :

65V

Collector Emitter Voltage (VCEO) :

65V

Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Gain Bandwidth Product :

100MHz

Transistor Element Material :

SILICON

Transistor Type :

NPN

Noise Figure :

10 dB

Height :

940μm

Peak Reflow Temperature (Cel) :

260

Halogen Free :

Halogen Free

Contact Plating :

Tin

Transition Frequency :

100MHz

Number of Terminations :

3

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

100mA

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

600mV

Collector Base Voltage (VCBO) :

80V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Voltage - Rated DC :

65V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Width :

1.3mm

Max Breakdown Voltage :

65V

Length :

2.9mm

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Number of Pins :

3

Emitter Base Voltage (VEBO) :

6V

ECCN Code :

EAR99

Surface Mount :

yes

Element Configuration :

Single

Current - Collector Cutoff (Max) :

15nA ICBO

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Number of Elements :

1