BC846BLP4-7B
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- Mfr.Part #
- BC846BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A 3DFN
- Stock
- 11,013
- In Stock ：
- 11,013
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 200mA
- Number of Pins :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Length :
- 1.05mm
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- BC846
- Max Collector Current :
- 100mA
- REACH SVHC :
- No SVHC
- Contact Plating :
- Gold
- Additional Feature :
- High Reliability
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e4
- Power Dissipation :
- 1W
- Published :
- 2017
- Height :
- 350μm
- Current - Collector Cutoff (Max) :
- 15nA
- Width :
- 650μm
- Mounting Type :
- Surface Mount
- Power - Max :
- 410mW
- Max Breakdown Voltage :
- 65V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 220mV
- Lead Free :
- Lead Free
- Terminal Form :
- NO LEAD
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- 3-XFDFN
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1W
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 300MHz
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 65V
- Datasheets
- BC846BLP4-7B
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC846BLP4-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 220mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 65V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC846BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846BLP4-7B Applications
There are a lot of Diodes Incorporated
BC846BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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