BC846BLP4-7B
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- Mfr.Part #
- BC846BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A 3DFN
- Stock
- 11,013
- In Stock ：
- 11,013
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Width :
- 650μm
- Current - Collector Cutoff (Max) :
- 15nA
- Length :
- 1.05mm
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 300MHz
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- JESD-609 Code :
- e4
- Height :
- 350μm
- Number of Elements :
- 1
- Published :
- 2017
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Package / Case :
- 3-XFDFN
- Polarity/Channel Type :
- NPN
- Power - Max :
- 410mW
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 220mV
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 65V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 300MHz
- Max Breakdown Voltage :
- 65V
- Terminal Form :
- NO LEAD
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 200mA
- Contact Plating :
- Gold
- Collector Emitter Voltage (VCEO) :
- 65V
- Base Part Number :
- BC846
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC846BLP4-7B
BC846BLP4-7B Documents
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC846BLP4-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 220mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 65V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC846BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846BLP4-7B Applications
There are a lot of Diodes Incorporated
BC846BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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