BC846B-7-F
- Mfr.Part #
- BC846B-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 7,414
- In Stock :
- 7,414
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Breakdown Voltage :
- 65V
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Published :
- 1997
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 65V
- Gain Bandwidth Product :
- 300MHz
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 310mW
- Transition Frequency :
- 300MHz
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- hFE Min :
- 200
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Base Part Number :
- BC846
- Pbfree Code :
- yes
- Length :
- 3.05mm
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 1.1mm
- Operating Temperature :
- -65°C~150°C TJ
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Current Rating :
- 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 300mW
- Termination :
- SMD/SMT
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 200mV
- Weight :
- 7.994566mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC846B-7-F

NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846B-7-F Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC846B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC846B-7-F Applications
There are a lot of Diodes Incorporated
BC846B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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