BC846AW
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- Mfr.Part #
- BC846AW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT323
- Stock
- 26,380
- In Stock ：
- 26,380
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 200mV
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 100mA
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 65V
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Type :
- GENERAL PURPOSE
- Transition Frequency :
- 300MHz
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Height :
- 1mm
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 65V
- Frequency :
- 300MHz
- Length :
- 2.2mm
- Max Power Dissipation :
- 200mW
- hFE Min :
- 110
- Max Breakdown Voltage :
- 65V
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Weight :
- 6.010099mg
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Width :
- 1.35mm
- Base Part Number :
- BC846
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2017
- Terminal Form :
- Gull wing
- Datasheets
- BC846AW
BC846AW Documents
NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC846AW-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.
BC846AW-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846AW-7-F Applications
There are a lot of Diodes Incorporated
BC846AW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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