BC846AW,115
- Mfr.Part #
- BC846AW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC846AW - SMALL SIGNAL
- Stock
- 7,426
- In Stock :
- 7,426
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Emitter Breakdown Voltage :
- 65V
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 65V
- Terminal Position :
- Dual
- Published :
- 2012
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Base Part Number :
- BC846
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pin Count :
- 3
- Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Datasheets
- BC846AW,115

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC846AW,115 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC846AW,115 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC846AW,115 Applications
There are a lot of Nexperia USA Inc.
BC846AW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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