BC846ALT3G
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- Mfr.Part #
- BC846ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 21,091
- In Stock ：
- 21,091
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Qualification Status :
- Not Qualified
- hFE Min :
- 110
- Frequency :
- 100MHz
- Voltage - Rated DC :
- 65V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 65V
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 65V
- Element Configuration :
- Single
- Max Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.01mm
- Length :
- 3.04mm
- Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Current Rating :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 65V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Published :
- 2007
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC846ALT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846ALT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.
BC846ALT3G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846ALT3G Applications
There are a lot of ON Semiconductor
BC846ALT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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