BC846ALT3G
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- Mfr.Part #
- BC846ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 21,091
- In Stock ：
- 21,091
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 3.04mm
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Height :
- 1.01mm
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 65V
- Voltage - Rated DC :
- 65V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- 80V
- Surface Mount :
- yes
- Current Rating :
- 100mA
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 65V
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- hFE Min :
- 110
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- Datasheets
- BC846ALT3G
BC846ALT3G Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846ALT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.
BC846ALT3G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846ALT3G Applications
There are a lot of ON Semiconductor
BC846ALT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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