BC846ALT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

15nA ICBO

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

65V

Emitter Base Voltage (VEBO) :

6V

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Current Rating :

100mA

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Voltage - Rated DC :

65V

Frequency :

100MHz

Width :

1.3mm

Published :

2005

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

600mV

Number of Pins :

3

REACH SVHC :

No SVHC

Length :

2.9mm

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

100MHz

hFE Min :

110

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

80V

Halogen Free :

Halogen Free

Power Dissipation :

300mW

Max Power Dissipation :

300mW

Height :

940μm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

65V

Polarity/Channel Type :

NPN

Pin Count :

3

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Transition Frequency :

100MHz

Contact Plating :

Tin

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

NPN

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

65V