BC846ALT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

80V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

65V

Mounting Type :

Surface Mount

hFE Min :

110

Collector Emitter Saturation Voltage :

600mV

JESD-609 Code :

e3

Gain Bandwidth Product :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300mW

Max Breakdown Voltage :

65V

Number of Pins :

3

Max Power Dissipation :

300mW

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Radiation Hardening :

No

REACH SVHC :

No SVHC

Voltage - Rated DC :

65V

Number of Elements :

1

Width :

1.3mm

Frequency :

100MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Transistor Element Material :

SILICON

Height :

940μm

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

4 Weeks

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Length :

2.9mm

Element Configuration :

Single

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

6V

Current Rating :

100mA

Published :

2005

Max Collector Current :

100mA

Contact Plating :

Tin

Transition Frequency :

100MHz

ECCN Code :

EAR99

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

65V

Transistor Type :

NPN