BC640TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Published :

2007

Number of Pins :

3

Max Power Dissipation :

1W

Polarity/Channel Type :

PNP

Element Configuration :

Single

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Collector Emitter Saturation Voltage :

-500mV

Weight :

240.007063mg

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Width :

3.86mm

Packaging :

Tape and Box (TB)

Voltage :

80V

Voltage - Rated DC :

-80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Max Collector Current :

1A

Operating Temperature :

150°C TJ

Transition Frequency :

100MHz

Collector Base Voltage (VCBO) :

-100V

Length :

4.58mm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material :

SILICON

Current :

1A

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Current Rating :

-1A

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Elements :

1

hFE Min :

40

Max Breakdown Voltage :

80V

ECCN Code :

EAR99

Mount :

Through Hole

JESD-609 Code :

e3

Frequency :

100MHz

Base Part Number :

BC640

Gain Bandwidth Product :

100MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

80V

Factory Lead Time :

6 Weeks

Height :

4.58mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Power Dissipation :

1W

Collector Emitter Breakdown Voltage :

80V

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO