BC640TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

-100V

Current Rating :

-1A

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Number of Elements :

1

Transistor Element Material :

SILICON

Packaging :

Tape and Box (TB)

Weight :

240.007063mg

hFE Min :

40

Collector Emitter Breakdown Voltage :

80V

Gain Bandwidth Product :

100MHz

Contact Plating :

Tin

Polarity/Channel Type :

PNP

Mounting Type :

Through Hole

Current :

1A

REACH SVHC :

No SVHC

Element Configuration :

Single

Terminal Position :

BOTTOM

Max Collector Current :

1A

Max Power Dissipation :

1W

Mount :

Through Hole

Power Dissipation :

1W

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Length :

4.58mm

Published :

2007

Collector Emitter Saturation Voltage :

-500mV

Number of Pins :

3

ECCN Code :

EAR99

Lead Free :

Lead Free

Width :

3.86mm

Max Breakdown Voltage :

80V

Transition Frequency :

100MHz

Voltage - Rated DC :

-80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Height :

4.58mm

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Voltage :

80V

Frequency :

100MHz

Base Part Number :

BC640