BC640,126

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Mfr.Part #
BC640,126
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 80V 1A TO92-3
Stock
36,091
In Stock :
36,091

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Reach Compliance Code :
Unknown
Surface Mount :
No
Transition Frequency :
100MHz
Transistor Application :
AMPLIFIER
Packaging :
Tape and Box (TB)
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Voltage - Collector Emitter Breakdown (Max) :
80V
Published :
2004
Terminal Position :
BOTTOM
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
HTS Code :
8541.21.00.95
Transistor Element Material :
SILICON
Frequency - Transition :
145MHz
Time@Peak Reflow Temperature-Max (s) :
40
Peak Reflow Temperature (Cel) :
250
Configuration :
Single
JESD-30 Code :
O-PBCY-T3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Base Part Number :
BC640
Qualification Status :
Not Qualified
Current - Collector (Ic) (Max) :
1A
Power - Max :
830mW
Power Dissipation-Max (Abs) :
0.8W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Polarity/Channel Type :
PNP
Number of Terminations :
3
Terminal Finish :
Matte Tin (Sn)
Number of Elements :
1
Current - Collector Cutoff (Max) :
100nA ICBO
VCEsat-Max :
0.5 V
Transistor Type :
PNP
Mounting Type :
Through Hole
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC640,126 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number:BC640, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, BC640,126 pinout, BC640,126 datasheet PDF, BC640,126 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC640,126 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC640,126


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

BC640,126 Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.

BC640,126 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz


BC640,126 Applications


There are a lot of NXP USA Inc.
BC640,126 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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