BC640G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

OBSOLETE (Last Updated: 3 days ago)

Surface Mount :

No

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e1

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

625mW

Max Power Dissipation :

625mW

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Terminal Position :

BOTTOM

hFE Min :

25

Transistor Type :

PNP

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Single

Pin Count :

3

Number of Pins :

3

Collector Base Voltage (VCBO) :

-80V

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Terminations :

3

Mounting Type :

Through Hole

Pbfree Code :

yes

Published :

2005

Transition Frequency :

150MHz

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

500mV

Frequency :

150MHz

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-80V

Number of Elements :

1

Max Collector Current :

500mA

Collector Emitter Saturation Voltage :

-500mV

Qualification Status :

Not Qualified

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

RoHS Status :

RoHS Compliant

Gain Bandwidth Product :

150MHz

Base Part Number :

BC640

Current Rating :

-500mA

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA