BC640,112

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Mfr.Part #
BC640,112
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 80V 1A TO92-3
Stock
10,334
In Stock :
10,334

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
VCEsat-Max :
0.5 V
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Power Dissipation-Max (Abs) :
0.83W
JESD-30 Code :
O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) :
40
Polarity/Channel Type :
PNP
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
250
Configuration :
Single
Power - Max :
830mW
JESD-609 Code :
e3
Voltage - Collector Emitter Breakdown (Max) :
80V
Frequency - Transition :
145MHz
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Terminal Finish :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Reach Compliance Code :
Unknown
Transition Frequency :
145MHz
Operating Temperature :
150°C TJ
Base Part Number :
BC640
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Packaging :
Bulk
Transistor Type :
PNP
Current - Collector (Ic) (Max) :
1A
Terminal Position :
BOTTOM
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
ECCN Code :
EAR99
HTS Code :
8541.21.00.75
Transistor Element Material :
SILICON
Published :
2004
Surface Mount :
No
Datasheets
BC640,112
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC640,112 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:BC640, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), BC640,112 pinout, BC640,112 datasheet PDF, BC640,112 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC640,112 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC640,112


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BC640,112 Overview


This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 145MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

BC640,112 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 145MHz


BC640,112 Applications


There are a lot of NXP USA Inc.
BC640,112 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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