BC618RL1
- Mfr.Part #
- BC618RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 55V 1A TO92
- Stock
- 18,504
- In Stock :
- 18,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 12V
- Pin Count :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Frequency - Transition :
- 150MHz
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Voltage - Rated DC :
- 55V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 200μA, 200mA
- Power Rating :
- 300mW
- HTS Code :
- 8541.21.00.75
- Collector Emitter Voltage (VCEO) :
- 1.1V
- Collector Emitter Breakdown Voltage :
- 55V
- Continuous Collector Current :
- 1A
- Base Part Number :
- BC618
- Qualification Status :
- Not Qualified
- Current Rating :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 240
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 200mA 5V
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 625mW
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 50nA
- Additional Feature :
- EUROPEAN PART NUMBER
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- No
- Polarity :
- NPN
- Mount :
- Through Hole
- Lead Free :
- Contains Lead
- Power Dissipation :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Datasheets
- BC618RL1

NPN - Darlington -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC618RL1 Overview
In this device, the DC current gain is 10000 @ 200mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 200μA, 200mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC618RL1 Features
the DC current gain for this device is 10000 @ 200mA 5V
the vce saturation(Max) is 1.1V @ 200μA, 200mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 150MHz
BC618RL1 Applications
There are a lot of ON Semiconductor
BC618RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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