BC618G

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Mfr.Part #
BC618G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN DARL 55V 1A TO92
Stock
28,221
In Stock :
28,221

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
BC618
Number of Pins :
3
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
ECCN Code :
EAR99
Voltage - Rated DC :
55V
Mount :
Through Hole
Lead Free :
Lead Free
Terminal Position :
BOTTOM
Transistor Application :
AMPLIFIER
Transition Frequency :
150MHz
Number of Terminations :
3
Transistor Element Material :
SILICON
Power Dissipation :
625mW
Collector Emitter Voltage (VCEO) :
55V
Published :
2007
Collector Emitter Saturation Voltage :
1.1V
Collector Emitter Breakdown Voltage :
55V
Packaging :
Bulk
Transistor Type :
NPN - Darlington
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 200mA 5V
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
1A
Lifecycle Status :
OBSOLETE (Last Updated: 4 days ago)
Number of Elements :
1
Collector Base Voltage (VCBO) :
80V
Pbfree Code :
yes
Element Configuration :
Single
Current - Collector Cutoff (Max) :
50nA
Continuous Collector Current :
1A
RoHS Status :
RoHS Compliant
Max Power Dissipation :
625mW
Peak Reflow Temperature (Cel) :
260
Frequency - Transition :
150MHz
Current Rating :
1A
Qualification Status :
Not Qualified
JESD-609 Code :
e1
Vce Saturation (Max) @ Ib, Ic :
1.1V @ 200μA, 200mA
Emitter Base Voltage (VEBO) :
12V
Polarity :
NPN
Datasheets
BC618G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC618G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BC618, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), BC618G pinout, BC618G datasheet PDF, BC618G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC618G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC618G


NPN - Darlington -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BC618G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 200mA 5V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 200μA, 200mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

BC618G Features


the DC current gain for this device is 10000 @ 200mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 200μA, 200mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 150MHz


BC618G Applications


There are a lot of ON Semiconductor
BC618G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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