BC618RL1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Current - Collector Cutoff (Max) :

50nA

RoHS Status :

RoHS Compliant

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 200μA, 200mA

Pin Count :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Power Dissipation :

625mW

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN - Darlington

Element Configuration :

Single

Pbfree Code :

yes

Max Collector Current :

1A

Emitter Base Voltage (VEBO) :

12V

Max Power Dissipation :

625mW

Collector Emitter Saturation Voltage :

1.1V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Current Rating :

1A

Number of Pins :

3

Frequency - Transition :

150MHz

Transistor Element Material :

SILICON

Base Part Number :

BC618

Transition Frequency :

150MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

BOTTOM

Number of Terminations :

3

JESD-609 Code :

e1

ECCN Code :

EAR99

Additional Feature :

EUROPEAN PART NUMBER

Published :

2007

Voltage - Rated DC :

55V

Collector Base Voltage (VCBO) :

80V

Polarity :

NPN

Collector Emitter Breakdown Voltage :

55V

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 200mA 5V

Continuous Collector Current :

1A

Collector Emitter Voltage (VCEO) :

55V