BC618,112
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- Mfr.Part #
- BC618,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 55V 0.5A TO-92
- Stock
- 15,140
- In Stock ：
- 15,140
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 625mW
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 200mA 5V
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 155MHz
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50μA
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 200μA, 200mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- VCEsat-Max :
- 1.1 V
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC618
- Frequency - Transition :
- 155MHz
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.75
- Published :
- 2009
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 55V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-30 Code :
- O-PBCY-T3
- Datasheets
- BC618,112
NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC618,112 Overview
DC current gain in this device equals 10000 @ 200mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.1V @ 200μA, 200mA.As a result, the part has a transition frequency of 155MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC618,112 Features
the DC current gain for this device is 10000 @ 200mA 5V
the vce saturation(Max) is 1.1V @ 200μA, 200mA
a transition frequency of 155MHz
BC618,112 Applications
There are a lot of NXP USA Inc.
BC618,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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