BC559CTA
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- Mfr.Part #
- BC559CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 12,515
- In Stock ：
- 12,515
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 110
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 30V
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- -30V
- Weight :
- 240mg
- Max Power Dissipation :
- 500mW
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -100mA
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- ECCN Code :
- EAR99
- Height :
- 5.33mm
- Number of Elements :
- 1
- Power Dissipation :
- 500mW
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -250mV
- Gain Bandwidth Product :
- 150MHz
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- -30V
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC559
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Voltage (VCEO) :
- 30V
- Length :
- 5.2mm
- Packaging :
- Tape and Box (TB)
- Additional Feature :
- LOW NOISE
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC559CTA
BC559CTA Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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