BC559CTA
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- Mfr.Part #
- BC559CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 12,515
- In Stock ：
- 12,515
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -30V
- Qualification Status :
- Not Qualified
- Published :
- 2007
- Base Part Number :
- BC559
- Additional Feature :
- LOW NOISE
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Weight :
- 240mg
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current Rating :
- -100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Contact Plating :
- Tin
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.19mm
- Frequency :
- 150MHz
- hFE Min :
- 110
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- -5V
- ECCN Code :
- EAR99
- Length :
- 5.2mm
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 30V
- Factory Lead Time :
- 6 Weeks
- Collector Base Voltage (VCBO) :
- -30V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Height :
- 5.33mm
- Datasheets
- BC559CTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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