BC55-10PASX
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- Mfr.Part #
- BC55-10PASX
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA BC55PAS - 60V, 1 A NPN
- Stock
- 975
- In Stock ：
- 975
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 420mW
- Transition Frequency :
- 180MHz
- Collector Emitter Voltage (VCEO) :
- 500mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 12 Weeks
- Terminal Form :
- NO LEAD
- Max Power Dissipation :
- 420mW
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 180MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-UDFN Exposed Pad
- Published :
- 2014
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Datasheets
- BC55-10PASX
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UDFN Exposed Pad Cut Tape (CT) Surface Mount
BC55-10PASX Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
BC55-10PASX Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BC55-10PASX Applications
There are a lot of Nexperia USA Inc.
BC55-10PASX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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