BC55-16PA,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

8 Weeks

Max Power Dissipation :

650mW

Package / Case :

3-PowerUDFN

Contact Plating :

Tin

Pin Count :

3

Collector Emitter Voltage (VCEO) :

60V

Collector Base Voltage (VCBO) :

60V

Terminal Position :

Dual

Power Dissipation :

1.65W

Packaging :

Tape and Reel (TR)

Max Collector Current :

1A

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

JESD-609 Code :

e3

Power - Max :

650mW

Max Breakdown Voltage :

60V

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Collector Emitter Breakdown Voltage :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Frequency :

180MHz

Transition Frequency :

180MHz

Mounting Type :

Surface Mount

Number of Terminations :

3

Case Connection :

COLLECTOR

Number of Elements :

1

Terminal Form :

NO LEAD

Published :

2011

Transistor Type :

NPN

Configuration :

Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO