BC55-16PA,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Contact Plating :

Tin

Number of Elements :

1

Transistor Element Material :

SILICON

Configuration :

Single

Power - Max :

650mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Terminal Position :

Dual

Package / Case :

3-PowerUDFN

Case Connection :

COLLECTOR

Max Power Dissipation :

650mW

Frequency :

180MHz

Power Dissipation :

1.65W

Transition Frequency :

180MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

5V

Published :

2011

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

60V

Terminal Form :

NO LEAD

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Max Collector Current :

1A

Number of Pins :

3

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

60V

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

60V