BC559C
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- Mfr.Part #
- BC559C
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92
- Stock
- 24,000
- In Stock ：
- 24,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 30V
- Additional Feature :
- LOW NOISE
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- -100mA
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC559
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -30V
- hFE Min :
- 110
- Collector Base Voltage (VCBO) :
- -30V
- Transition Frequency :
- 150MHz
- Width :
- 4.19mm
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -250mV
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Collector Emitter Voltage (VCEO) :
- 30V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 150MHz
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Box (TB)
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 500mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Length :
- 5.2mm
- Height :
- 5.33mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Max Collector Current :
- 100mA
- Published :
- 2007
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- BC559C
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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