BC559C
- Mfr.Part #
- BC559C
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92
- Stock
- 24,000
- In Stock :
- 24,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Factory Lead Time :
- 6 Weeks
- Frequency :
- 150MHz
- Max Breakdown Voltage :
- 30V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Power Dissipation :
- 500mW
- Transition Frequency :
- 150MHz
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 150MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Current Rating :
- -100mA
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- BC559
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Width :
- 4.19mm
- Operating Temperature :
- 150°C TJ
- Length :
- 5.2mm
- Voltage - Rated DC :
- -30V
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Height :
- 5.33mm
- Collector Base Voltage (VCBO) :
- -30V
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- hFE Min :
- 110
- Emitter Base Voltage (VEBO) :
- -5V
- Additional Feature :
- LOW NOISE
- Collector Emitter Saturation Voltage :
- -250mV
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Datasheets
- BC559C
BC559C Documents

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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