BC559BTA
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- Mfr.Part #
- BC559BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 141,701
- In Stock ：
- 141,701
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- -30V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOW NOISE
- Published :
- 2007
- Max Collector Current :
- 100mA
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current Rating :
- -100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- hFE Min :
- 110
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Packaging :
- Tape and Box (TB)
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Base Part Number :
- BC559
- Number of Pins :
- 3
- Factory Lead Time :
- 7 Weeks
- ECCN Code :
- EAR99
- Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Width :
- 4.19mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- -250mV
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Power Dissipation :
- 500mW
- Gain Bandwidth Product :
- 150MHz
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Height :
- 5.33mm
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency :
- 150MHz
- Voltage - Rated DC :
- -30V
- Length :
- 5.2mm
- Datasheets
- BC559BTA
BC559BTA Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559BTA Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC559BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559BTA Applications
There are a lot of ON Semiconductor
BC559BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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