BC559BTA

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Mfr.Part #
BC559BTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 30V 0.1A TO92-3
Stock
141,701
In Stock :
141,701

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
30V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Max Power Dissipation :
500mW
Additional Feature :
LOW NOISE
Collector Emitter Breakdown Voltage :
30V
Number of Terminations :
3
REACH SVHC :
No SVHC
Voltage - Rated DC :
-30V
Current Rating :
-100mA
Qualification Status :
Not Qualified
Length :
5.2mm
Element Configuration :
Single
Base Part Number :
BC559
Transistor Application :
SWITCHING
Contact Plating :
Tin
Transition Frequency :
150MHz
Mount :
Through Hole
Number of Pins :
3
Emitter Base Voltage (VEBO) :
-5V
Lead Free :
Lead Free
Factory Lead Time :
7 Weeks
Width :
4.19mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Frequency :
150MHz
Terminal Position :
BOTTOM
Height :
5.33mm
Collector Emitter Voltage (VCEO) :
30V
Weight :
240mg
Current - Collector Cutoff (Max) :
15nA ICBO
Collector Base Voltage (VCBO) :
-30V
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Number of Elements :
1
Packaging :
Tape and Box (TB)
Pbfree Code :
yes
hFE Min :
110
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Published :
2007
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gain Bandwidth Product :
150MHz
Max Collector Current :
100mA
Transistor Type :
PNP
Power Dissipation :
500mW
Collector Emitter Saturation Voltage :
-250mV
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Datasheets
BC559BTA
Introducing Transistors - Bipolar (BJT) - Single onsemi BC559BTA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:BC559, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), BC559BTA pinout, BC559BTA datasheet PDF, BC559BTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC559BTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC559BTA


PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

BC559BTA Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC559BTA Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz


BC559BTA Applications


There are a lot of ON Semiconductor
BC559BTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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