BC558C_J35Z
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- Mfr.Part #
- BC558C_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 48,731
- In Stock ：
- 48,731
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 150MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Mounting Type :
- Through Hole
- Base Part Number :
- BC558
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- BC558C_J35Z
PNP 150°C TJ 15nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC558C_J35Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
BC558C_J35Z Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
BC558C_J35Z Applications
There are a lot of ON Semiconductor
BC558C_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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