BC558BZL1G
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- Mfr.Part #
- BC558BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92
- Stock
- 27,704
- In Stock ：
- 27,704
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Frequency :
- 360MHz
- Collector Base Voltage (VCBO) :
- -30V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- PNP
- hFE Min :
- 180
- Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC558
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -300mV
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current Rating :
- -100mA
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- EUROPEAN PART NUMBER
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- -30V
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 360MHz
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 360MHz
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 650mV
- Surface Mount :
- No
- Datasheets
- BC558BZL1G
BC558BZL1G Documents
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 100mA volts.
BC558BZL1G Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 360MHz
BC558BZL1G Applications
There are a lot of ON Semiconductor
BC558BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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