BC558BZL1G
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- Mfr.Part #
- BC558BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92
- Stock
- 27,704
- In Stock ：
- 27,704
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 650mV
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- BC558
- Collector Emitter Saturation Voltage :
- -300mV
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 360MHz
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transition Frequency :
- 360MHz
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Frequency :
- 360MHz
- Current Rating :
- -100mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Max Collector Current :
- 100mA
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Additional Feature :
- EUROPEAN PART NUMBER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- hFE Min :
- 180
- Surface Mount :
- No
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- -30V
- Published :
- 2007
- Datasheets
- BC558BZL1G
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 100mA volts.
BC558BZL1G Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 360MHz
BC558BZL1G Applications
There are a lot of ON Semiconductor
BC558BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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