BC558BTA
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- Mfr.Part #
- BC558BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR,
- Stock
- 10,100
- In Stock ：
- 10,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Factory Lead Time :
- 7 Weeks
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC558
- Packaging :
- Tape and Box (TB)
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -250mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- hFE Min :
- 110
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency :
- 150MHz
- Number of Pins :
- 3
- Length :
- 5.2mm
- Collector Base Voltage (VCBO) :
- -30V
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- Transition Frequency :
- 150MHz
- Height :
- 5.33mm
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Weight :
- 240mg
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- -30V
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 500mW
- Current Rating :
- -100mA
- Gain Bandwidth Product :
- 150MHz
- ECCN Code :
- EAR99
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Datasheets
- BC558BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BTA Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor
BC558BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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