BC558BTA
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- Mfr.Part #
- BC558BTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 10,100
- In Stock ：
- 10,100
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Length :
- 5.2mm
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 7 Weeks
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- -30V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 150MHz
- Base Part Number :
- BC558
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Current Rating :
- -100mA
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Transistor Application :
- SWITCHING
- Frequency :
- 150MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 30V
- Pbfree Code :
- yes
- Power Dissipation :
- 500mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 110
- Width :
- 4.19mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Voltage - Rated DC :
- -30V
- Collector Emitter Saturation Voltage :
- -250mV
- Element Configuration :
- Single
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 150MHz
- Height :
- 5.33mm
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Datasheets
- BC558BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BTA Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor
BC558BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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