BC558BTA
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- Mfr.Part #
- BC558BTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 10,100
- In Stock ：
- 10,100
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 30V
- Width :
- 4.19mm
- Base Part Number :
- BC558
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Contact Plating :
- Tin
- Packaging :
- Tape and Box (TB)
- Transition Frequency :
- 150MHz
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- -30V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- hFE Min :
- 110
- Frequency :
- 150MHz
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- -250mV
- Current Rating :
- -100mA
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Height :
- 5.33mm
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Weight :
- 240mg
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- -30V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lead Free :
- Lead Free
- Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2007
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Factory Lead Time :
- 7 Weeks
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Length :
- 5.2mm
- Datasheets
- BC558BTA
BC558BTA Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BTA Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor
BC558BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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