BC557BTF
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- Mfr.Part #
- BC557BTF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92-3
- Stock
- 65,061
- In Stock ：
- 65,061
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 5.33mm
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Width :
- 4.19mm
- Base Part Number :
- BC557
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- Weight :
- 240mg
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 7 Weeks
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Frequency :
- 150MHz
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -45V
- Collector Emitter Saturation Voltage :
- -250mV
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Published :
- 2007
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Current Rating :
- -100mA
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5.2mm
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 110
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 150MHz
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- -50V
- Datasheets
- BC557BTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC557BTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC557BTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557BTF Applications
There are a lot of ON Semiconductor
BC557BTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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