BC557BTA
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- Mfr.Part #
- BC557BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92-3
- Stock
- 5,386
- In Stock ：
- 5,386
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Length :
- 4.58mm
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tape and Box (TB)
- Weight :
- 240mg
- Max Collector Current :
- 100mA
- Terminal Position :
- BOTTOM
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Current Rating :
- -100mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- hFE Min :
- 110
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -45V
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 500mW
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Height :
- 4.58mm
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Base Part Number :
- BC557
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Width :
- 3.86mm
- Transition Frequency :
- 150MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- -50V
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -250mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 150MHz
- Mount :
- Through Hole
- Datasheets
- BC557BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557BTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC557BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557BTA Applications
There are a lot of ON Semiconductor
BC557BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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