BC557BTA
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- Mfr.Part #
- BC557BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92-3
- Stock
- 5,386
- In Stock ：
- 5,386
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Width :
- 3.86mm
- Factory Lead Time :
- 6 Weeks
- Published :
- 2007
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Height :
- 4.58mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Packaging :
- Tape and Box (TB)
- Length :
- 4.58mm
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 100mA
- Current Rating :
- -100mA
- Transistor Application :
- SWITCHING
- hFE Min :
- 110
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -50V
- Transition Frequency :
- 150MHz
- Mounting Type :
- Through Hole
- Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- -250mV
- Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 45V
- Base Part Number :
- BC557
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Weight :
- 240mg
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -45V
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Datasheets
- BC557BTA
BC557BTA Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557BTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC557BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557BTA Applications
There are a lot of ON Semiconductor
BC557BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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