BC556BTFR
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- Mfr.Part #
- BC556BTFR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO92-3
- Stock
- 33,766
- In Stock ：
- 33,766
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -80V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Width :
- 4.19mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 65V
- Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Height :
- 5.33mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Weight :
- 240mg
- Base Part Number :
- BC556
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5.2mm
- Gain Bandwidth Product :
- 150MHz
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- Max Power Dissipation :
- 500mW
- JESD-609 Code :
- e3
- Current Rating :
- -100mA
- Mount :
- Through Hole
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 110
- Max Breakdown Voltage :
- 65V
- Voltage - Rated DC :
- -65V
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Terminal Position :
- BOTTOM
- Frequency :
- 150MHz
- Datasheets
- BC556BTFR
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC556BTFR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 65V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC556BTFR Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556BTFR Applications
There are a lot of ON Semiconductor
BC556BTFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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