BC556BTA
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- Mfr.Part #
- BC556BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO92-3
- Stock
- 13,780
- In Stock ：
- 13,780
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Width :
- 3.86mm
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Voltage :
- 65V
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- -65V
- Number of Elements :
- 1
- Power Dissipation :
- 500mW
- Length :
- 4.58mm
- hFE Min :
- 110
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Box (TB)
- Current :
- 1A
- Frequency :
- 150MHz
- Radiation Hardening :
- No
- Mount :
- Surface Mount, Through Hole
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 500mW
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Through Hole
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 65V
- Base Part Number :
- BC556
- Weight :
- 240.007063mg
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 65V
- Height :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current Rating :
- -100mA
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Emitter Saturation Voltage :
- -250mV
- Transistor Element Material :
- SILICON
- Datasheets
- BC556BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC556BTA Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 65V volts.The maximum collector current is 100mA volts.
BC556BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556BTA Applications
There are a lot of ON Semiconductor
BC556BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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