BC556ATA
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- Mfr.Part #
- BC556ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO92-3
- Stock
- 82,266
- In Stock ：
- 82,266
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Number of Pins :
- 3
- Height :
- 5.33mm
- Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- BC556
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Weight :
- 240mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- -65V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- hFE Min :
- 110
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Breakdown Voltage :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Element Configuration :
- Single
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 100mA
- Transition Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -100mA
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Width :
- 4.19mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Emitter Breakdown Voltage :
- 65V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- -80V
- Length :
- 5.2mm
- Datasheets
- BC556ATA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC556ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC556ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556ATA Applications
There are a lot of ON Semiconductor
BC556ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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