BC556A
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- Mfr.Part #
- BC556A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V
- Stock
- 11,932
- In Stock ：
- 11,932
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2007
- Weight :
- 240mg
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- -80V
- Max Breakdown Voltage :
- 65V
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Power Dissipation :
- 500mW
- Max Collector Current :
- 100mA
- Height :
- 5.33mm
- Gain Bandwidth Product :
- 150MHz
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 65V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- -100mA
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- hFE Min :
- 110
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Voltage - Rated DC :
- -65V
- Transition Frequency :
- 150MHz
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- Length :
- 5.2mm
- Base Part Number :
- BC556
- Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Mount :
- Through Hole
- Width :
- 4.19mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Datasheets
- BC556A
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC556ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC556ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556ATA Applications
There are a lot of ON Semiconductor
BC556ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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