BC556A
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- Mfr.Part #
- BC556A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V
- Stock
- 11,932
- In Stock ：
- 11,932
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -80V
- Gain Bandwidth Product :
- 150MHz
- Power Dissipation :
- 500mW
- hFE Min :
- 110
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Published :
- 2007
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Elements :
- 1
- Base Part Number :
- BC556
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency :
- 150MHz
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Factory Lead Time :
- 2 Weeks
- Weight :
- 240mg
- Voltage - Rated DC :
- -65V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Width :
- 4.19mm
- Height :
- 5.33mm
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 500mW
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 65V
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 65V
- Length :
- 5.2mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -250mV
- Mount :
- Through Hole
- Current Rating :
- -100mA
- Datasheets
- BC556A
BC556A Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC556ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC556ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556ATA Applications
There are a lot of ON Semiconductor
BC556ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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