BC556A,112
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- Mfr.Part #
- BC556A,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO-92
- Stock
- 40,116
- In Stock ：
- 40,116
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Finish :
- Tin
- Frequency - Transition :
- 100MHz
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Published :
- 2002
- JESD-30 Code :
- O-PBCY-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 100mA
- Base Part Number :
- BC556
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation-Max (Abs) :
- 0.5W
- Configuration :
- Single
- VCEsat-Max :
- 0.65 V
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Voltage - Collector Emitter Breakdown (Max) :
- 65V
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 500mW
- Datasheets
- BC556A,112
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC556A,112 Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.
BC556A,112 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC556A,112 Applications
There are a lot of NXP USA Inc.
BC556A,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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