BC556A,112

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Mfr.Part #
BC556A,112
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 65V 0.1A TO-92
Stock
40,116
In Stock :
40,116

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Packaging :
Bulk
Power Dissipation-Max (Abs) :
0.5W
Surface Mount :
No
Mounting Type :
Through Hole
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Base Part Number :
BC556
Power - Max :
500mW
Number of Elements :
1
Voltage - Collector Emitter Breakdown (Max) :
65V
Transition Frequency :
100MHz
Number of Terminations :
3
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
JESD-30 Code :
O-PBCY-T3
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
125 @ 2mA 5V
Frequency - Transition :
100MHz
VCEsat-Max :
0.65 V
Current - Collector Cutoff (Max) :
15nA ICBO
Polarity/Channel Type :
PNP
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max) :
100mA
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
BOTTOM
Terminal Finish :
Tin
Published :
2002
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
HTS Code :
8541.21.00.95
Pin Count :
3
Datasheets
BC556A,112
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC556A,112 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BC556, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), BC556A,112 pinout, BC556A,112 datasheet PDF, BC556A,112 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC556A,112 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC556A,112


PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BC556A,112 Overview


This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.

BC556A,112 Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz


BC556A,112 Applications


There are a lot of NXP USA Inc.
BC556A,112 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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