BC550CBU
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- Mfr.Part #
- BC550CBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92-3
- Stock
- 3,236
- In Stock ：
- 3,236
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 500mW
- Number of Elements :
- 1
- Length :
- 4.58mm
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 45V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Pbfree Code :
- yes
- Current Rating :
- 100mA
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 250mV
- Weight :
- 179mg
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 3.86mm
- Case Connection :
- Isolated
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- hFE Min :
- 110
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Transition Frequency :
- 300MHz
- Base Part Number :
- BC550
- Factory Lead Time :
- 7 Weeks
- Frequency :
- 300MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Wire
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- Height :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Gain Bandwidth Product :
- 300MHz
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Datasheets
- BC550CBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC550CBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC550CBU Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC550CBU Applications
There are a lot of ON Semiconductor
BC550CBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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