BC550CBU
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- Mfr.Part #
- BC550CBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92-3
- Stock
- 3,236
- In Stock ：
- 3,236
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Voltage - Rated DC :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Wire
- Width :
- 3.86mm
- Number of Terminations :
- 3
- Power Dissipation :
- 500mW
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Length :
- 4.58mm
- Weight :
- 179mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 250mV
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 300MHz
- Max Power Dissipation :
- 500mW
- Factory Lead Time :
- 7 Weeks
- Polarity/Channel Type :
- NPN
- hFE Min :
- 110
- Case Connection :
- Isolated
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 300MHz
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Published :
- 2002
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Height :
- 4.58mm
- Base Part Number :
- BC550
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BC550CBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC550CBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC550CBU Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC550CBU Applications
There are a lot of ON Semiconductor
BC550CBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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