BC51PA,115
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- Mfr.Part #
- BC51PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A 3HUSON
- Stock
- 50
- In Stock ：
- 50
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 420mW
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Power Dissipation :
- 1.65W
- Max Collector Current :
- 1A
- Package / Case :
- 3-PowerUDFN
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Published :
- 2011
- Collector Base Voltage (VCBO) :
- 45V
- Power - Max :
- 420mW
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Frequency :
- 145MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 145MHz
- Configuration :
- Single
- Terminal Form :
- NO LEAD
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Base Part Number :
- BC51PA
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Datasheets
- BC51PA,115
BC51PA,115 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC51PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 145MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 1A volts.
BC51PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC51PA,115 Applications
There are a lot of Nexperia USA Inc.
BC51PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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