BC51-10PA,115
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- Mfr.Part #
- BC51-10PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA BC51-10PA - SMALL S
- Stock
- 7,780
- In Stock ：
- 7,780
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Terminal Form :
- NO LEAD
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 145MHz
- Published :
- 2011
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Frequency :
- 145MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Base Part Number :
- BC51PA
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 1.65W
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 45V
- Mounting Type :
- Surface Mount
- Power - Max :
- 420mW
- Package / Case :
- 3-PowerUDFN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Max Power Dissipation :
- 420mW
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC51-10PA,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC51-10PA,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.145MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BC51-10PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC51-10PA,115 Applications
There are a lot of Nexperia USA Inc.
BC51-10PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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