BC516-D27Z
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- Mfr.Part #
- BC516-D27Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1A TO92-3
- Stock
- 16,347
- In Stock ：
- 16,347
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1V
- Weight :
- 286mg
- Emitter Base Voltage (VEBO) :
- 10V
- Current Rating :
- -1A
- hFE Min :
- 3000
- Element Configuration :
- Single
- Number of Pins :
- 3
- Mount :
- Through Hole
- Transition Frequency :
- 200MHz
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 5 Weeks
- Frequency - Transition :
- 200MHz
- Voltage - Rated DC :
- -30V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP - Darlington
- Collector Base Voltage (VCBO) :
- 40V
- Max Collector Current :
- 1A
- Max Breakdown Voltage :
- 30V
- Base Part Number :
- BC516
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Contact Plating :
- Copper, Silver, Tin
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Power Dissipation :
- 625mW
- Continuous Collector Current :
- 1A
- Published :
- 2015
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC516-D27Z
BC516-D27Z Documents
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC516-D27Z Overview
In this device, the DC current gain is 30000 @ 20mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC516-D27Z Features
the DC current gain for this device is 30000 @ 20mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -1A
a transition frequency of 200MHz
BC516-D27Z Applications
There are a lot of ON Semiconductor
BC516-D27Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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