BC516-D27Z
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- Mfr.Part #
- BC516-D27Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1A TO92-3
- Stock
- 16,347
- In Stock ：
- 16,347
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- Mount :
- Through Hole
- Weight :
- 286mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 1V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Published :
- 2015
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 200MHz
- Base Part Number :
- BC516
- Lead Free :
- Lead Free
- hFE Min :
- 3000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -30V
- Transition Frequency :
- 200MHz
- Transistor Type :
- PNP - Darlington
- Contact Plating :
- Copper, Silver, Tin
- Current Rating :
- -1A
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 40V
- Continuous Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Polarity :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 5 Weeks
- Datasheets
- BC516-D27Z
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC516-D27Z Overview
In this device, the DC current gain is 30000 @ 20mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC516-D27Z Features
the DC current gain for this device is 30000 @ 20mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -1A
a transition frequency of 200MHz
BC516-D27Z Applications
There are a lot of ON Semiconductor
BC516-D27Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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