BC516-D27Z
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- Mfr.Part #
- BC516-D27Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1A TO92-3
- Stock
- 16,347
- In Stock ：
- 16,347
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Published :
- 2015
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Emitter Base Voltage (VEBO) :
- 10V
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 200MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Copper, Silver, Tin
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Polarity :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 30V
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 30V
- Base Part Number :
- BC516
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Factory Lead Time :
- 5 Weeks
- Weight :
- 286mg
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 200MHz
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 625mW
- Current Rating :
- -1A
- hFE Min :
- 3000
- Collector Emitter Saturation Voltage :
- 1V
- Max Collector Current :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Datasheets
- BC516-D27Z
BC516-D27Z Documents
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC516-D27Z Overview
In this device, the DC current gain is 30000 @ 20mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC516-D27Z Features
the DC current gain for this device is 30000 @ 20mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -1A
a transition frequency of 200MHz
BC516-D27Z Applications
There are a lot of ON Semiconductor
BC516-D27Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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